Datasheet ZXMC4A16DN8TA - Diodes MOSFET, NP CH, 40 V, 5.2A/4.7A, SO8

Detailed Description

Manufacturer: Diodes

Description: MOSFET, NP CH, 40 V, 5.2A/4.7A, SO8

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Docket:
ZXMC4A16DN8
COMPLEMENTARY 40V ENHANCEMENT MODE MOSFET
SUMMARY N-Channel = V(BR)DSS= 40V : RDS(on)= 0.05 ; ID= 5.2A P-Channel = V(BR)DSS= -40V : RDS(on)= 0.06 ; ID= -4.7A DESCRIPTION
This new generation of trench MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed.

This makes them ideal for high efficiency, low voltage, power management applications.
SO8

Specifications:

• Continuous Drain Current Id: 5.2 A
• Drain Source Voltage Vds: 40 V
• Module Configuration: Dual
• Number of Pins: 8
• On Resistance Rds(on): 0.05 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 1.25 W
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (20-Jun-2011)
• Transistor Case Style: SOIC
• Transistor Polarity: N and P Channel

RoHS: Yes