Datasheet PMBFJ112 - NXP TRANSISTOR, JFET, N, RF, SOT-23

Detailed Description

Manufacturer: NXP

Description: TRANSISTOR, JFET, N, RF, SOT-23

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Docket:
PMBFJ111; PMBFJ112; PMBFJ113
N-channel junction FETs
Rev.

4 -- 20 September 2011 Product data sheet
1. Product profile
1.1 General description

Specifications:

• Breakdown Voltage Vbr: 40 V
• Current Idss Min: 5 mA
• Current Ig: 50 mA
• Drain Source Voltage Vds: 40 V
• Gate-Source Cutoff Voltage Vgs(off) Max: 3 V
• Junction Temperature Tj Max: 150°C
• Mounting Type: SMD
• Number of Pins: 3
• On State Resistance Max: 50 Ohm
• Package / Case: SOT-23
• Pin Configuration: D(1), S(2), G(3)
• Power Dissipation Max: 300 mW
• Power Dissipation: 300 mW
• SVHC: No SVHC (19-Dec-2011)
• Transistor Case Style: SOT-23
• Transistor Polarity: N Channel
• Transistor Type: JFET
• Voltage Vgs Off Min: -10 V
• Zero Gate Voltage Drain Current Idss: 5 mA

RoHS: Yes