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Datasheet NXP BF245A,112

NXP BF245B,112

Manufacturer:NXP
Series:BF245A, BF245B, BF245C
Part Number:BF245B,112

N-channel silicon field-effect transistors

Datasheets

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    DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors
    Product specification Supersedes data of April 1995 1996 Jul 30 NXP Semiconductors Product specification N-channel silicon field-effect transistors
    FEATURES Interchangeability of drain and source connections Frequencies up to 700 MHz. APPLICATIONS LF, HF and DC amplifiers. DESCRIPTION General purpose N-channel symmetrical junction field-effect transistors in a plastic TO-92 variant package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. Fig.1
    handbook, halfpage 2 BF245A; BF245B; BF245C PINNING PIN 1 2 3 SYMBOL d s g drain source gate DESCRIPTION 1 3 g
    MAM257 d s Simplified outline (TO-92 variant) and symbol. QUICK REFERENCE DATA SYMBOL VDS VGSoff VGSO IDSS PARAMETER drain-source voltage gate-source cut-off voltage gate-source voltage drain current BF245A BF245B BF245C Ptot yfs Crs total power dissipation forward transfer admittance reverse transfer capacitance Tamb = 75 C VDS = 15 V; VGS = 0; f = 1 kHz; Tamb = 25 C VDS = 20 V; VGS = 1 V; f = 1 MHz; Tamb = 25 C ID = 10 nA; VDS = 15 V open drain VDS = 15 V; VGS = 0 2 6 12 3 1.1 6.5 15 25 300 6.5 mA mA mA mW mS pF CONDITIONS 0.25 MIN. TYP. MAX. 30 8 30 UNIT V V V 1996 Jul 30 2 NXP Semiconductors Product specification N-channel silicon field-effect transistors
    LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VGDO VGSO ID IG Ptot Tstg Tj Note PARAMETER drain-source voltage gate-drain voltage gate-source voltage drain current gate current total power dissipation storage temperature operating junction temperature up to Tamb = 75 C; open source open drain BF245A; BF245B; BF245C CONDITIONS up to Tamb = 90 C; note 1 MIN. MAX. 30 30 30 25 10 300 300 +150 150 V V V UNIT mA mA mW mW C C 65 1. Device mounted on a printed-circuit board, minimum lead length 3 mm, mounting pad for drain lead minimum 10 mm 10 mm. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient thermal resistance from junction to ambient STATIC CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL V(BR)GSS VGSoff VGS PARAMETER gate-source breakdown voltage gate-source cut-off voltage gate-source voltage BF245A BF245B BF245C IDSS drain current BF245A BF245B BF245C IGSS gate cut-off current VGS = 20 V; VDS = 0 VGS = 20 V; VDS = 0; Tj = 125 C Note 1. Measured under pulse conditions: tp = 300 s; 0.02. VDS = 15 V; VGS = 0; note 1 2 6 12 6.5 15 25 5 0.5 mA mA mA nA ...

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Other Names: BF245B112, BF245B 112

Docket:
DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors
Product specification Supersedes data of April 1995 1996 Jul 30 NXP Semiconductors Product specification N-channel silicon field-effect transistors
FEATURES Interchangeability of drain and source connections Frequencies up to 700 MHz. APPLICATIONS LF, HF and DC amplifiers. DESCRIPTION General purpose N-channel symmetrical junction field-effect transistors in a plastic TO-92 variant package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. Fig.1
handbook, halfpage 2 BF245A; BF245B; BF245C PINNING PIN 1 2 3 SYMBOL d s g drain source gate DESCRIPTION 1 3 g
MAM257 d s Simplified outline (TO-92 variant) and symbol. QUICK REFERENCE DATA SYMBOL VDS VGSoff VGSO IDSS PARAMETER drain-source voltage gat...

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