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Datasheet ON Semiconductor NVD3055L170T4G

Manufacturer:ON Semiconductor
Series:NVD3055L170
Part Number:NVD3055L170T4G

Power MOSFET 60 V, 9 A, 170 mOhm Single N-Channel DPAK Logic Level

Datasheets

  • Download » Datasheet, PDF, 122 Kb
    Docket ↓
    NTD3055L170,
    NVD3055L170
    Power MOSFET
    9.0 A, 60 V, Logic Level, N-Channel
    DPAK/IPAK
    Designed for low voltage, high speed switching applications in
    power supplies, converters and power motor controls and bridge
    circuits.
    Features http://onsemi.com 9.0 AMPERES, 60 VOLTS
    RDS(on) = 170 mW NVD Prefix for Automotive and Other Applications Requiring N-Channel
    G Typical Applications D Unique Site and Control Change Requirements; AEC-Q101
    Qualified and PPAP Capable
    These are Pb-Free Devices Power Supplies
    Converters
    Power Motor Controls
    Bridge Circuits S
    4
    4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
    Rating 1 1 2 Symbol Value Unit Drain-to-Source Voltage VDSS 60 Vdc Drain-to-Gate Voltage (RGS = 10 MW) VDGR 60 Vdc VGS
    VGS ±15
    ±20 ID
    ID 9.0
    3.0 ...

Manufacturer's Classification

IGBTs & FETs > MOSFETs

Docket:
NTD3055L170,
NVD3055L170
Power MOSFET
9.0 A, 60 V, Logic Level, N-Channel
DPAK/IPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features http://onsemi.com 9.0 AMPERES, 60 VOLTS
RDS(on) = 170 mW NVD Prefix for Automotive and Other Applications Requiring N-Channel
G Typical Applications D Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable
These are Pb-Free Devices Power Supplies
Converters
Power Motor Controls
Bridge Circuits S
4
4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating 1 1 2 Symbol Value Unit Drain-to-Source Voltage VDSS 60 Vdc Drain-to-Gate Voltage (RGS = 10 MW) VDGR 60 Vdc VGS
VGS ±15
±20 ID
ID 9.0
3.0
27 Apk 1 -Gate 28.5
0.19
2.1
1.5 W
W/°C
W
W 2 -Drain -55 to
175 °C 30 mJ Gate-to-Source Voltage
-Continuous
-Non-repetitive (tpv10 ms)
Drain Current
-Continuous @ TA = 25°C
-Continuous @ TA = 100°C
-Single Pulse (tpv10 ms)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 1)
Total Power Dissipation @ TA = 25°C (Note 2)
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche
Energy -Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vdc,
L = 1.0 mH, IL(pk) = 7.75 A, VDS = 60 Vdc)
Thermal Resistance
-Junction-to-Case
-Junction-to-Ambient (Note 1)
-Junction-to-Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds Vdc Adc IDM
PD TJ, Tstg
EAS 5.2
71.4
100 TL 260 DPAK
CASE 369C
(Surface Mounted)
STYLE 2 °C 2 3 IPAK
CASE 369D
(Straight Lead)
STYLE 2 MARKING DIAGRAMS
& PIN ASSIGNMENTS 3 -Source 1 -Gate
2 -Drain °C/W
RqJC
RqJA
RqJA 3 3 -Source
A
Y
WW
3170L
G AYWW
31
70LG AYWW
31
70LG 4
Drain 4
Drain = Assembly Location*
= Year
= Work Week
= Device Code
...

  • Series: NVD3055L170 (1)
    • NVD3055L170T4G
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