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Datasheet ON Semiconductor NTD3055L104T4G

Manufacturer:ON Semiconductor
Series:NTD3055L104
Part Number:NTD3055L104T4G

Power MOSFET 60 V, 12 A, 104 mOhm Single N-Channel DPAK/IPAK Logic Level

Datasheets

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Manufacturer's Classification

IGBTs & FETs > MOSFETs

Docket:
NTD3055L104,
NTDV3055L104
Power MOSFET
12 A, 60 V, Logic Level N-Channel
DPAK/IPAK
Designed for low voltage, high speed switching applications in power
supplies, converters and power motor controls and bridge circuits. www.onsemi.com Features Lower RDS(on)
Lower VDS(on)
Tighter VSD Specification
Lower Diode Reverse Recovery Time
Lower Reverse Recovery Stored Charge
NTDV and STDV Prefixes for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable
These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) TYP ID MAX 60 V 104 mW 12 A D N-Channel
G Typical Applications S Power Supplies
Converters
Power Motor Controls
Bridge Circuits 4
4 Symbol Value Unit Drain-to-Source Voltage VDSS 60 Vdc Drain-to-Gate Voltage (RGS = 10 MW) VDGR 60 Vdc VGS
VGS "15
"20 Vdc ID
ID 12
10
45 Adc PD 48
0.32
2.1
1.5 W
W/°C
W
W TJ, Tstg -55 to
+175 °C Single Pulse Drain-to-Source Avalanche
Energy -Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vdc, L = 1.0 mH
IL(pk) = 11 A, VDS = 60 Vdc) EAS 61 mJ Thermal Resistance, -Junction-to-Case
-Junction-to-Ambient (Note 1)
-Junction-to-Ambient (Note 2) RqJC
RqJA
RqJA 3.13
71.4
100 °C/W TL 260 °C Rating Gate-to-Source Voltage, Continuous
-Non-Repetitive (tpv10 ms)
Drain Current
-Continuous @ TA = 25°C
-Continuous @ TA = 100°C
-Single Pulse (tpv10 ms)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 1)
Total Power Dissipation @ TA = 25°C (Note 2)
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds IDM September, 2016 -Rev. 10 3 2 3 IPAK
CASE 369D
STYLE 2 DPA...

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