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Datasheet ON Semiconductor STDV3055L104T4G

Manufacturer:ON Semiconductor
Series:NTDV3055L104
Part Number:STDV3055L104T4G

Power MOSFET 60 V, 12 A, 104 mOhm Single N-Channel DPAK/IPAK Logic Level

Datasheets

  • Download » Datasheet, PDF, 94 Kb
    Docket ↓
    NTD3055L104,
    NTDV3055L104
    Power MOSFET
    12 A, 60 V, Logic Level N-Channel
    DPAK/IPAK
    Designed for low voltage, high speed switching applications in power
    supplies, converters and power motor controls and bridge circuits. www.onsemi.com Features Lower RDS(on)
    Lower VDS(on)
    Tighter VSD Specification
    Lower Diode Reverse Recovery Time
    Lower Reverse Recovery Stored Charge
    NTDV and STDV Prefixes for Automotive and Other Applications
    Requiring Unique Site and Control Change Requirements;
    AEC-Q101 Qualified and PPAP Capable
    These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) TYP ID MAX 60 V 104 mW 12 A D N-Channel
    G Typical Applications S Power Supplies
    Converters
    Power Motor Controls
    Bridge Circuits 4
    4 Symbol Value Unit Drain-to-Source Voltage VDSS 60 Vdc Drain-to-Gate Voltage (RGS = 10 MW) VDGR 60 Vdc VGS
    VGS "15
    "20 Vdc ID
    ID 12 ...

Manufacturer's Classification

  • IGBTs & FETs > MOSFETs

Docket:
NTD3055L104,
NTDV3055L104
Power MOSFET
12 A, 60 V, Logic Level N-Channel
DPAK/IPAK
Designed for low voltage, high speed switching applications in power
supplies, converters and power motor controls and bridge circuits. www.onsemi.com Features Lower RDS(on)
Lower VDS(on)
Tighter VSD Specification
Lower Diode Reverse Recovery Time
Lower Reverse Recovery Stored Charge
NTDV and STDV Prefixes for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable
These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) TYP ID MAX 60 V 104 mW 12 A D N-Channel
G Typical Applications S Power Supplies
Converters
Power Motor Controls
Bridge Circuits 4
4 Symbol Value Unit Drain-to-Source Voltage VDSS 60 Vdc Drain-to-Gate Voltage (RGS = 10 MW) VDGR 60 Vdc VGS
VGS "15
"20 Vdc ID
ID 12
10
45 Adc PD 48
0.32
2.1
1.5 W
W/°C
W
W TJ, Tstg -55 to
+175 °C Single Pulse Drain-to-Source Avalanche
Energy -Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vdc, L = 1.0 mH
IL(pk) = 11 A, VDS = 60 Vdc) EAS 61 mJ Thermal Resistance, -Junction-to-Case
-Junction-to-Ambient (Note 1)
-Junction-to-Ambient (Note 2) RqJC
RqJA
RqJA 3.13
71.4
100 °C/W TL 260 °C Rating Gate-to-Source Voltage, Continuous
-Non-Repetitive (tpv10 ms)
Drain Current
-Continuous @ TA = 25°C
-Continuous @ TA = 100°C
-Single Pulse (tpv10 ms)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 1)
Total Power Dissipation @ TA = 25°C (Note 2)
Operating and Storage Tempe...

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