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Datasheet STMicroelectronics STD12NE06

Manufacturer:STMicroelectronics
Series:STD12NE06
Part Number:STD12NE06

N-Channel 60 V, 0.08 Ω, 12 A, IPAK/DPAK Single Feature Size Power MOSFET

Datasheets

Docket:
STD12NE06  N -CHANNEL 60V -0.08Ω -12A -IPAK/DPAK
SINGLE FEATURE SIZE POWER MOSFET
TYPE
STD12NE06




■ ■ V DSS R DS(on) ID 60 V < 0.10 Ω 12 A TYPICAL RDS(on) = 0.08 Ω
EXCEPTIONAL dv/dt CAPABILITY
AVALANCHE RUGGED TECHNOLOGY
100 % AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
ADD SUFFIX ”T4” FOR ORDERING IN TAPE
& REEL 3
3 2
1 DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting transistor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a remarkable manufacturing reproducibility. IPAK
TO-251
(Suffix ”-1”) 1 DPAK
TO-252
(Suffix ”T4”) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS
■ DC MOTOR CONTROL (DISK DRIVES,etc.)
■ DC-DC & DC-AC CONVERTERS
■ SYNCHRONOUS RECTIFICATION ABSOLUTE MAXIMUM RATINGS
Symb ol
V DS
V DGR
VGS Parameter Value Drain-source Voltage (VGS = 0) 60 V Drain-gate Voltage (R GS = 20 kΩ) 60 V ± 20 V 12 A Gate-source Voltage
o ID Drain Current (continuous) at Tc = 25 C ID o I DM ()
P tot Drain Current (continuous) at Tc = 100 C 8 A Drain Current (pulsed) 48 A Total Dissipation at T c = 25 oC 35 W 0.23 W /o C 6 V/ns Derating F actor
dv/dt( 1 )
T st g
Tj Peak Diode Recovery voltage slope
Storage T emperature
Max. Operating Junction Temperature () Pulse width limited by safe operating area March 1999 Unit -65 to 175 o C 175 o C ( 1) ISD ≤ 12 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 1/10 STD12NE06
THERMAL DATA
R th...

  • Series: STD12NE06 (1)
    • STD12NE06
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