Datasheet NDS9945 - Fairchild TRANSISTOR, MOSFET

Fairchild NDS9945

Part Number: NDS9945

Detailed Description

Manufacturer: Fairchild

Description: TRANSISTOR, MOSFET

Docket:
May 1998
NDS9945 Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance. These devices are particularly suited for low voltage applications such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features

Specifications:

Continuous Drain Current Id: 3.5 A
Current Id Max: 3.5 A
Drain Source Voltage Vds: 60 V
Mounting Type: SMD
Number of Pins: 8
On Resistance Rds(on): 100 MOhm
Operating Temperature Range: -55°C to +150°C
Package / Case: SOIC
Power Dissipation: 1.6 W
Rds(on) Test Voltage Vgs: 10 V
SVHC: No SVHC (19-Dec-2011)
Threshold Voltage Vgs Typ: 1.7 V
Transistor Case Style: SOIC
Transistor Polarity: N Channel
Voltage Vds Typ: 60 V
Voltage Vgs Max: 1.7 V
Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes