Datasheets - MOSFET Single Transistors
Subsection: "MOSFET Single Transistors"
Manufacturers
Advanced Linear Devices Alpha & Omega Ampleon APT Avago Technologies Central Semiconductor Clare Cree Diodes Efficient Power Conversion Fairchild Freescale Fuji Electric HALO Inchange Semiconductor Infineon Integra Technologies International Rectifier International Wire Intersil IXYS IXYS RF Littelfuse MCC Microchip Microsemi Motorola Multicomp National Semiconductor New Jersey Semiconductor Nexperia NTE Electronics NXP ON Semiconductor Panasonic Philips Renesas Rohm Sanyo Semelab Semikron Siliconix STMicroelectronics Taiwan Semiconductor Temic Texas Instruments Toshiba Vishay Wayon WolfspeedSearch results: 8,105 Output: 1-20
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- MOSFET Single Transistors Vishay IRFZ24 IRFZ24PbF-BE3
Transistors, Transistor Arrays & Modules Vishay IRFZ24
Power MOSFET Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. - Power MOSFET Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
- MOSFET Single Transistors Vishay IRFZ24 IRFZ24PbF
Transistors, Transistor Arrays & Modules Vishay IRFZ24Power MOSFET Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. - MOSFET Single Transistors Vishay SiHFU9310 SiHFU9310-GE3
Transistors, Transistor Arrays & Modules Vishay SiHFU9310Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ... - Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ...
- MOSFET Single Transistors Vishay SiHFR9310 SiHFR9310-GE3
Transistors, Transistor Arrays & Modules Vishay SiHFR9310Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ... - MOSFET Single Transistors Vishay SiHFR9310 SiHFR9310TRL-GE3
Transistors, Transistor Arrays & Modules Vishay SiHFR9310Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ... - MOSFET Single Transistors Vishay SiHFR9310 SiHFR9310TR-GE3
Transistors, Transistor Arrays & Modules Vishay SiHFR9310Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ... - MOSFET Single Transistors Vishay SiHFR9310 SiHFR9310TRR-GE3
Transistors, Transistor Arrays & Modules Vishay SiHFR9310Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ... - Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ...
- MOSFET Single Transistors Vishay IRFU9310 IRFU9310PbF
Transistors, Transistor Arrays & Modules Vishay IRFU9310Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ... - Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ...
- MOSFET Single Transistors Vishay IRFR9310 IRFR9310TRLPbF
Transistors, Transistor Arrays & Modules Vishay IRFR9310Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ... - MOSFET Single Transistors Vishay IRFR9310 IRFR9310PbF
Transistors, Transistor Arrays & Modules Vishay IRFR9310Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ... - MOSFET Single Transistors Vishay IRFR9310 IRFR9310TRLPbF-BE3
Transistors, Transistor Arrays & Modules Vishay IRFR9310Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ... - MOSFET Single Transistors Vishay IRFR9310 IRFR9310TRPbF
Transistors, Transistor Arrays & Modules Vishay IRFR9310Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ... - MOSFET Single Transistors Vishay IRFR9310 IRFR9310TRRPbF
Transistors, Transistor Arrays & Modules Vishay IRFR9310Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ... - Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ...
- Single P-Channel Logic Level PowerTrench MOSFET -30V, -11A, 14mΩ This P-Channel Logic Level MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low ...
EPC2361: 100 V, 101 A Enhancement-Mode GaN Power Transistor Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide ...
