Datasheets - MOSFET Single Transistors Efficient Power Conversion
Subsection: "MOSFET Single Transistors"
Manufacturer: "Efficient Power Conversion"
Manufacturers
Advanced Linear Devices Alpha & Omega Ampleon APT Avago Technologies Central Semiconductor Clare Cree Diodes Efficient Power Conversion Fairchild Freescale Fuji Electric HALO Inchange Semiconductor Infineon Integra Technologies International Rectifier International Wire Intersil IXYS IXYS RF Littelfuse MCC Microchip Microsemi Motorola Multicomp National Semiconductor New Jersey Semiconductor Nexperia NTE Electronics NXP ON Semiconductor Panasonic Philips Renesas Rohm Sanyo Semelab Semikron Siliconix STMicroelectronics Taiwan Semiconductor Temic Texas Instruments Toshiba Vishay Wayon WolfspeedSearch results: 9 Output: 1-9
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EPC2361: 100 V, 101 A Enhancement-Mode GaN Power Transistor Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide ...- 150 V, 329 A Enhancement Mode GaN Power Transistor
- 200 V, 260 A Enhancement Mode GaN Power Transistor
Enhancement Mode Power Transistor VDS, 100 V RDS(on), 1.8 mΩ ID, 101 A Pulsed ID, 408 A- 170 V, 102 A Enhancement-Mode GaN Power Transistor
200 V, 54 A Enhancement-Mode GaN Power Transistor VDS, 200 V RDS(on), 22 mΩ ID, 14 A Pulsed ID, 54 A- 200 V, 162 A Enhancement-Mode GaN Power Transistor VDS, 200 V RDS(on), 8 mΩ ID, 32 A Pulsed ID, 162 A
100 V, 37 A Enhancement-Mode GaN Power Transistor- 350 V, 26 A Enhancement-Mode GaN Power Transistor
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