Datasheets - MOSFET Single Transistors Nexperia
Subsection: "MOSFET Single Transistors"
Manufacturer: "Nexperia"
Manufacturers
Advanced Linear Devices Alpha & Omega Ampleon APT Avago Technologies Central Semiconductor Clare Cree Diodes Efficient Power Conversion Fairchild Freescale Fuji Electric HALO Inchange Semiconductor Infineon Integra Technologies International Rectifier International Wire Intersil IXYS IXYS RF Littelfuse MCC Microchip Microsemi Motorola Multicomp National Semiconductor New Jersey Semiconductor Nexperia NTE Electronics NXP ON Semiconductor Panasonic Philips Renesas Rohm Sanyo Semelab Semikron Siliconix STMicroelectronics Taiwan Semiconductor Temic Texas Instruments Toshiba Vishay Wayon WolfspeedSeries
BSP122 BUK7M3R3-40H BUK7S0R5-40H BUK7V4R2-40H BUK9M3R3-40H BUK9V13-40H GAN063-650WSA PHK12NQ03LT PMF170XP PMN50XP PMV20EN PMV60EN PSMN0R9-25YLC PSMN0R9-30ULD PSMN1R0-40ULD PSMN3R7-100BSE PSMNR55-40SSHSearch results: 17 Output: 1-17
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20 V, 1 A P-channel Trench MOSFET P-channel enhancement mode Field-Effect Transistor (FET) in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
N-channel 40 V, 0.55 mOhm, 500 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology 500 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFET in LFPAK88 package. NextPowerS3 family using ...
- N-channel 40 V, 0.5 mOhm standard level MOSFET in LFPAK88 Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a copper-clip LFPAK88 package. This product has been fully designed and ...
P-channel TrenchMOS extremely low level FET
Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration) Dual, logic level N-channel MOSFET in an LFPAK56D package (half-bridge configuration), using Trench 9 TrenchMOS technology. This product has been designed ...- Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration) Dual, standard level N-channel MOSFET in an LFPAK56D package (half-bridge configuration), using Trench 9 TrenchMOS technology. This product has been ...
30 V, N-channel Trench MOSFET
N-channel TrenchMOS logic level FET
N-channel vertical D-MOS logic level FET
650 V, 50 mΩ Gallium Nitride (GaN) FET The GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride (GaN) FET. It is a normally-off device that combines Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies — offering ...- Automotive qualified logic level N-channel MOSFET in an LFPAK33 package using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive applications.
- Automotive qualified standard level N-channel MOSFET in an LFPAK33 package using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive applications.
- Standard level gate drive N-channel enhancement mode MOSFET in a D2PAK package qualified to 175 °C. Part of Nexperia's NextPower Live portfolio, the PSMN3R7-100BSE delivers very low R DSon and a very strong linear-mode (SOA) performance.
- SOT1023A with improved creepage and clearance to meet UL2595 requirements 280 Amp, logic level gate drive N-channel enhancement mode MOSFET in 150В °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed ...
- SOT1023A with improved creepage and clearance to meet UL2595 requirements. 300 Amp logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia's unique 'њSchottkyPlus'ќ technology delivers ...
- N-channel TrenchMOS logic level FET
- N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology
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