IR Introduces Efficient, Reliable Ultra-fast 1200 V IGBTs for Induction Heating Applications

International Rectifier IRG7PH35UD1 IRG7PH42UD1

International Rectifier introduced a pair of efficient, reliable ultra-fast Trench Insulated Gate Bipolar Transistors (IGBTs) optimized for induction heating and resonant switching applications such as welding and high power rectification.

The new 1200 V IGBTs utilize IR’s proven thin-wafer trench technology to offer critical performance benefits including low VCE(on) and ultra-fast switching to reduce power dissipation and achieve higher power density. In addition, devices feature a 1300 V repetitive peak rating for added system reliability. The IGBTs are co-packaged with a low forward-voltage high peak current soft forward-recovery diode optimized for resonant zero current turn-on operation.

International Rectifier - IRG7PH35UD1, IRG7PH42UD1

These new IGBTs complement IR’s family of IGBTs for motor drive and hard switching applications. IR’s focus on power applications allows for optimization of devices to meet the technical requirements of various power systems.

Specifications

Part Number
Package
BV
I(nom)
Vceon
Rth(j-c)
Type
IRG7PH35UD1
TO247 - Copack
1200
20
1.9
0.70 °C/W
Ultrafast
IRG7PH42UD1
TO247 - Copack
1200
30
1.7
0.39 °C/W
Ultrafast

Availability and Pricing

Pricing begins at US $2.76 each for the IRG7PH35UD1PbF and US $3.98 each for the IRG7PH42UD1-EP in 10,000-unit quantities. Production quantities are available immediately. Prices are subject to change.

irf.com

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