Infineon has launched two new LDMOS RF power transistors for applications in the 1200MHz to 1400MHz frequency band. PTVA123501EC achieves over 400W peak output power with 13dB gain and 52 percent efficiency measured at 1400MHz, Vdd 50V and a 300µsec, 10 percent DC pulse.
The accompanying driver, PTVA120251EA, achieves 38W with 14dB gain and 54 percent efficiency (measured at 1400MHz, Vdd 50V, and a 100µsec, 10 percent duty cycle pulse).
PTVA123501EC features input and output matching for easy integration, and is capable of withstanding a 10:1 VSWR at all phase angles and 350W output power plus Vdd 50V. It is available in a compact 248-style, Pb-free, RoHS-compliant, open cavity ceramic package.
Both devices are manufactured using Infineon's rugged 50V LDMOS process, thus ensuring superior ruggedness, stability and power density. Evaluation boards are available for both transistors.
Features
- Designed for operation in the 1200MHz to 1400MHz frequency band
- Input and output match for easy integration
- Excellent thermal performance
- Capable of withstanding 10:1 VSWR, all phase angles, 50V Vdd and 350W output power
- Excellent ruggedness
Applications
- L-band RADAR
- Industrial RF power amplifiers
