New medium power MOSFETs in DFN1010

NXP PMXB65UPE PMXB75UPE

NXP enlarges its small-signal MOSFETs portfolio with two new medium power P-channel MOSFETs in the ultra small, leadless package DFN1010D-3 (SOT1215) with solderable side pads. PMXB65UPE and PMXB75UPE offer a drain current of up to 3.2 A, drain-source voltages of 12 and 20 V and ESD protection of up to 1.5 kV. 

NXP PMXB75UPE

The new types are ideal for portable and mobile applications where small-footprint solutions are required due to drain-source-on-state resistance of max 72 and 85 mΩ, a very low gate-source threshold voltage of 0.68 V and ultra-small package dimensions.

The package of only 1.1 × 1.0 × 0.37 mm with power dissipation Ptot of 1 W is suitable for currents up to 3 A. Its 100% tin-plated solderable side pads offer improved mounting and allow visual inspection of solder joints.

Key features and benefits

  • ID up to 3.2 A
  • Voltages of 12 and 20 V
  • ESD protection of 1.5 kV
  • Drain-source on-state resistance RDSon of 72 and 85 mΩ max
  • Trench MOSFET technology
  • ElectroStatic Discharge (ESD) protection 1.5 kV HBM
  • Very low gate-source threshold voltage for portable applications VGS(th) = -0.68 V
  • Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
  • 100% tin-plated, solderable side pads for excellent visual solder inspection
  • Exposed drain pad for excellent thermal conduction

Key applications

  • Portable and mobile, applications that require small-footprint solutions
  • Power management
  • Charging circuits
  • Power switches (motors, fans and more)
  • Level switching

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