International Rectifier announced the introduction of the IRFH4257D FastIRFET™ dual power MOSFET housed in a high performance 4×5 PQFN power block package. The new package option expands the power block family’s capability to lower power for compact designs in 12 V input DC-DC synchronous buck applications including advanced telecom and netcom equipment, servers, graphic cards, desktop, Ultrabook and notebook computers.
The IRFH4257D features IR’s latest generation silicon and proprietary packaging technology which offers excellent thermal performance, low on-state resistance (RDS(on)) and gate charge (QG). These features deliver superior power density and lower switching losses in a compact 4×5 power block.
The IRFH4257D is qualified to industrial grade and moisture sensitivity level 1 (MSL1), and features an environmentally friendly, lead-free and RoHS compliant bill of materials.
Specifications
|
Part Number
|
PQFN
Package size |
Current
rating |
Typ. / Max
RDSon @ 4.5 V (mW) |
QG typical
@ 4.5 V (nC) |
QGD typical
@ 4.5 V (nC) |
|
4 × 5
|
25 A
|
3.7 / 4.6
|
10
|
3.4
|
|
|
1.65 / 2.1
|
23
|
7.6
|
Availability and Pricing
Pricing for the IRFH4257D FastIRFET™ starts at US $0.99 in 10,000-unit quantities. Production orders are available immediately. Prices are subject to change.
