NXP Announces New 65 V LDMOS Technology that Speeds RF Power Design
NXP » MRFX1K80H, MRFX1K80N
The new MRFX series and its flagship 1800 W transistor focus on ease of use
NXP Semiconductors announced a new laterally diffused metal oxide semiconductor (LDMOS) technology for RF power transistors designed for operation up to 65 volts (V). This extra-high voltage LDMOS process will give rise to a new generation of products: the MRFX series.
As RF becomes more pervasive in various industrial applications, NXP is providing RF power engineers with a means to reduce design cycle time:
The first product in the MRFX series is the MRFX1K80, the industry’s most powerful continuous wave (CW) RF transistor. It is designed to deliver 1800 watts (W) CW at 65 V for applications from 1 to 470 megahertz (MHz) and is capable of handling 65:1 voltage standing wave ratio (VSWR).
The MRFX1K80 is targeted for industrial, scientific and medical (ISM) applications such as laser generation, plasma etching, magnetic-resonance imaging (MRI), skin treatment and diathermy, as well as particle accelerators and other scientific applications. The MRFX1K80 is also designed for radio and very high frequency (VHF) TV broadcast transmitters. Industrial heating, welding, curing or drying machines currently using vacuum tubes will also benefit from the higher level of control that solid state enables.
Availability and Development Support
The MRFX1K80H transistor in an air cavity ceramic package is currently sampling, with production expected in August 2017. Reference circuits for 27 MHz and 87.5-108 MHz applications are available now. In a few months, NXP will offer the over-molded plastic version, the MRFX1K80N, that reduces the thermal resistance by 30 percent for further reliability and ease of use. For pricing or additional information, please contact your local NXP sales office or NXP approved distributor.
News on theme: