Second generation platform passes AEC-Q101 tests for high power automotive applications Transphorm Inc. announced that its second generation, JEDEC-qualified high voltage gallium nitride (GaN) technology is now the industry’s first GaN ...
STMicroelectronics has introduced new MOSFET devices in the advanced PowerFLAT 5×6 dual-side cooling (DSC) package, enabling increased power density in automotive Electronic Control Units (ECUs). The new MOSFETs have already been chosen by ...
A full range of 2 A-40 A 1200 V silicon-carbide (SiC) JBS (Junction Barrier Schottky) diodes from STMicroelectronics enables a wider range of applications to benefit from the high switching efficiency, fast recovery, and consistent temperature ...
Vishay Intertechnology introduced a new AEC-Q200 qualified inductor that is the industry’s first to offer a continuous current rating of 125 A. For automotive and industrial applications, the Vishay Dale IHXL-2000VZ-5A features a 190 A ...
Device Features High 37.8 A Continuous Drain Current and On-Resistance Down to 8.4 mΩ in Compact PowerPAK® SC-70 Package Vishay Intertechnology introduced a new 30 V n-channel TrenchFET® Gen IV power MOSFET that delivers increased ...
Diodes Incorporated introduced the DMNH4015SSDQ and DMTH6016LSDQ . Featuring low figure-of-merit on-resistance and gate charge specifications, these latest 40 V and 60 V dual, co-packaged enhancement mode MOSFETs minimize power losses, enabling ...
Diodes Incorporated introduced the D28V0H1U2P5Q at Embedded World 2017. Billed as the industry’s first unidirectional 1800 W automotive-compliant transient voltage suppressor (TVS), this device is designed to protect sensitive electronic ...
Applications Include White LED Backlights, Liquid Crystal Displays Toshiba Electronics Europe expanded its extensive portfolio of diodes with the addition of six low reverse-current Schottky Barrier Diodes (SBDs). With a peak reverse voltage of 40 ...
Reduces power loss and physical size of power supply systems Mitsubishi Electric Corporation announced its launch of a silicon-carbide Schottky-barrier diode (SiC-SBD) that incorporates a junction-barrier Schottky (JBS) structure to reduce the ...
Superjunction Device Provides Industry’s Lowest R DS(ON) ∙Q g FOM for Telecom, Industrial, and Enterprise Applications Vishay Intertechnology introduced the first device in its fourth generation of 600 V E Series power MOSFETs. ...