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  1. Tiny LGA package is 80 percent smaller than traditional 60-V load switches Texas Instruments (TI) introduced a new 60-V N-channel FemtoFET power transistor that provides the industry's lowest resistance that is 90 percent below traditional 60-V ...
    Discretes · Power » Texas Instruments » CSD18541F5
    22-06-2016
  2. Central Semiconductor introduces its newest energy efficient, high voltage UltraMOS™ MOSFET designed to minimize total conduction losses while maximizing power density. The CDM22012-800LRFP is a 12 A, 800 V MOSFET in the TO-220FP (Full Pack) ...
    Discretes · Power » Central Semiconductor » CDM22012-800LRFP
    02-06-2016
  3. NXP Semiconductors introduced the most powerful RF transistor in any technology operating at any frequency. Designed to deliver 1.50 kW CW at 50V, the MRF1K50H can reduce the number of transistors in high-power RF amplifiers, which decreases ...
    RF · Discretes » NXP » MRF1K50H
    15-05-2016
  4. Vishay Intertechnology expanded its portfolio of fast body diode n-channel power MOSFETs with the introduction of new 650 V EF Series devices. Augmenting the company’s 600 V offering, the Vishay Siliconix SiHx21N65EF , SiHx28N65EF , and ...
    Discretes · Power » Vishay » SiHA21N65EF, SiHB21N65EF, SiHG21N65EF, SiHH21N65EF, SiHP21N65EF, SiHG28N65EF, SiHP28N65EF
    15-05-2016
  5. Setting new benchmarks in power efficiency for high power switching systems ON Semiconductor has introduced a new series of insulated gate bipolar transistors (IGBTs) which utilize its proprietary Ultra Field Stop trench technology. The ...
    Discretes · Power » ON Semiconductor » NGTB40N120FL3WG, NGTB25N120FL3WG, NGTB40N120L3WG
    13-05-2016
  6. NXP Semiconductors set a new benchmark in RF power performance with four new LDMOS transistors. The new transistors aim to deliver best-in class performance for defense radar and identification friend or foe (IFF) systems operating between 900 and ...
    RF · Discretes » NXP » MMRF1312H/HS, MMRF1314H/HS, MMRF1317H/HS, MMRF2010N/GN
    11-04-2016
  7. Superior Switching Performance Helps Manufacturers Meet Tough Energy Efficiency and EMI Regulations Fairchild released its first 1200 V silicon carbide (SiC) diode, the FFSH40120ADN , in its series of upcoming SiC solutions. The 1200 V ...
    Discretes · High Voltage · Power » Fairchild » FFSH40120ADN
    25-03-2016
  8. Vishay Intertechnology announced a new series of surface-mount transient voltage suppressor (TVS) protection diodes that are the industry’s first to feature a 2 % breakdown voltage tolerance. Offered in the low-profile SMF package, Vishay ...
    Discretes » Vishay » VTVSxxASMF
    05-02-2016
  9. Vishay Intertechnology released two new bidirectional symmetrical (BiSy) single-line ESD protection diodes for portable electronics with a low working range of 3.3 V in the ultra-compact CLP0603 silicon package. Measuring only 0.6 mm by 0.3 mm with ...
    Discretes » Vishay » VBUS03B1-SD0, VCUT03E1-SD0
    01-02-2016
  10. Vishay Intertechnology released two new bidirectional single-line ESD protection diodes in the compact SOD-323 package. Measuring only 1.95 mm by 1.5 mm with a low 0.95 mm profile, the space-saving Vishay Semiconductors VLIN1626-02G and ...
    Discretes · Automotive » Vishay » VLIN1626-02G, VLIN2626-02G
    06-01-2016
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