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  1. Analog Devices introduced a medium-power, distributed driver amplifier which operates between 24 and 35 GHz. The HMC1131 amplifier provides 22-dB of gain, +35-dBm output IP3, and +24 dBm of output power at 1-dB gain compression. The new amplifier ...
    RF » Analog Devices » HMC1131
    10-09-2015
  2. e2v’s next generation DAC, the EV12DS400, brings an advanced combination of microwave capabilities and multi-Nyquist operation, and is now ready for general sampling. The EV12DS400 offers the highest levels of spectral purity, coupled with a ...
    RF · ADC, DAC » e2v » EV12DS400
    09-09-2015
  3. Patented FreeFlex™ RF-MEMS technology is designed to significantly outperform current RF switch designs to deliver the operational performances needed for next generation LTE-A handsets DelfMEMS has announced that its world leading, twelve ...
    28-08-2015
  4. Linear Technology announces the LTC5549, a double-balanced mixer that can operate either as an upconverter or downconverter, with a very wide RF frequency range from 2 GHz to 14 GHz. The LTC5549 offers exceptionally high linearity of 24.4 dBm IIP3 ...
    RF · Wireless » Linear Technology » LTC5549
    13-08-2015
  5. Analog Devices , Inc. introduced the HMC1127 and the HMC1126 MMIC (Monolithic Microwave Integrated Circuit) distributed power amplifiers. Covering the frequency range of 2-50 GHz, these new power amplifier die simplify system design and improve ...
    RF » Analog Devices » HMC1126, HMC1127
    13-08-2015
  6. MicroWave Technology, Inc. a division of IXYS Corporation released two pre-amplifiers for MRI coil applications. The MSM series pre-amp has a 0.45 dB noise figure and a 28 dB gain at 1.5T (64 MHz), 3T (123-128 MHz), and 7T (298 MHz) frequencies. It ...
    RF · Amplifiers · Medicine » MicroWave » MSM, MPE
    12-08-2015
  7. Freescale Semiconductor introduced two new broadband RF power amplifiers - the new Airfast AFIC901N LDMOS RF integrated device and the AFT05MS003N LDMOS transistor. The products can be operated at 3.6 or 7.5 V and are targeted for applications ...
    RF · Wireless » Freescale » AFIC901N, AFT05MS003N
    10-08-2015
  8. Cree , Inc. has introduced two industry-leading GaN HEMT (high-electron-mobility transistor) devices that solve a number of long-standing issues for radar systems employing traditional travelling-wave-tube (TWT) amplifiers. GaN-based solid-state ...
    RF » Cree » CGHV59350, CGHV31500F
    29-06-2015
  9. Custom MMIC is pleased to announce the addition of the CMD219C4, a new GaN low-noise amplifier, to their standard product catalog. The CMD219C4 is a broadband MMIC low-noise amplifier fabricated in GaN technology that operates from 4 to 8 GHz with ...
    RF · Amplifiers » Custom MMIC » CMD219C4
    17-06-2015
  10. New WiFi Power Amplifier Delivers Industry-Leading Performance and Integration for 802.11ac Wave 2 Infrastructure and Multimedia Applications, Including Access Points, Routers, Media Gateways and Set-Top Boxes Anadigics, Inc. introduced the AWL5911 ...
    RF · Wireless » Anadigics » AWL5905, AWL5910, AWL5911
    16-02-2015
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