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  1. Julien Happich EE Times Europe Raytheon UK and Newcastle University have co-developed a silicon carbide based amplifier circuitry with operational amplifier like characteristics, exhibiting a high temperature gain of 200 at 400 C. The amplifier, ...
    04-05-2016
  2. Leah Scully Machine Design Aluminum battery protoype can be quickly recharged again and again A recent breakthrough in aluminum-battery research could eventually replace lithium and alkaline batteries: Hongjie Dai, professor of chemistry, and his ...
    09-09-2015
  3. Amy Norcross EDN Researchers at the Netherlands’ Delft University of Technology, in collaboration with scientists at the Japan Advanced Institute of Science and Technology, have developed a method that uses a laser and liquid silicon ink to ...
    12-08-2015
  4. Dexter Johnson IEEE Spectrum An international team of researchers from Germany and the US have fabricated for the first time a field effect transistor made of black-arsenic phosphorus. Crystals of semiconducting black arsenic phosphorus. Photo: ...
    21-07-2015
  5. A new carbon material developed at Stanford University is said to boost the performance of energy storage technologies. We have developed a 'designer carbon' that is both versatile and controllable, said Zhenan Bao, professor of chemical ...
    Future Technologies · Power » Designer carbon
    01-06-2015
  6. Thin light-emitting fibers that can be woven into textiles could be made into glowing clothes and other wearable electronics, researchers at Fudan University in Shanghai say. Illustration: Zhitao Zhang Organic light-emitting diodes (OLEDs) are ...
    20-04-2015
  7. Stephen Mraz Machine Design A super-slim generator has been constructed out of a few layers of molybdenum disulfide (MoS 2 ) film each only an atom thick by engineers at the Georgia Institute of Technology teamed with researchers from Columbia ...
    10-02-2015
  8. Graham Prophet EDN Europe Researchers at IMEC have produced an 8-bit microprocessor that runs at 2.1 kHz. That is not a typing error for GHz; 2.1 kHz is a breakthrough speed in this instance because the transistors that make up the ...
    27-01-2015
  9. At International Electron Devices Meeting (IEDM) 2014 nanoelectronics research center imec demonstrated an ultra-low power RFID transponder chip. Operating at sub 1 V voltage and realized in thin-film transistor technology (TFTs) on plastic film, ...
    26-12-2014
  10. Martha Heil University of Maryland Researchers at the University of Maryland have invented a single tiny structure that includes all the components of a battery that they say could bring about the ultimate miniaturization of energy storage ...
    10-12-2014
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