Datasheet ZXMS6004DT8TA - Diodes MOSFET, NN CH, W ESD, 60 V, 1.2 A, SM8

Detailed Description

Manufacturer: Diodes

Description: MOSFET, NN CH, W ESD, 60 V, 1.2 A, SM8

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Docket:
A Product Line of Diodes Incorporated
ZXMS6004DT8 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFETTM MOSFET
SUMMARY
Continuous drain source voltage 60 V On-state resistance Nominal load current (VIN = 5V) Clamping Energy 500 m 1.2 A 210 mJ
DESCRIPTION

Specifications:

• Continuous Drain Current Id: 1.2 A
• Drain Source Voltage Vds: 60 V
• Module Configuration: Dual
• Number of Pins: 8
• On Resistance Rds(on): 0.35 Ohm
• Operating Temperature Range: -40°C to +150°C
• Power Dissipation: 1.16 W
• Rds(on) Test Voltage Vgs: 5 V
• SVHC: No SVHC (20-Jun-2011)
• Threshold Voltage Vgs Typ: 1 V
• Transistor Case Style: SM
• Transistor Polarity: Dual N Channel

RoHS: Yes

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