Datasheet SI1922EDH-T1-GE3 - Vishay MOSFET, NN CH, 20 V, 1.3 A, SOT363

Detailed Description

Manufacturer: Vishay

Description: MOSFET, NN CH, 20 V, 1.3 A, SOT363

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Docket:
Si1922EDH
Vishay Siliconix
Dual N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 20 RDS(on) () 0.198 at VGS = 4.5 V 0.225 at VGS = 2.5 V 0.263 at VGS = 1.8 V ID (A)a 1.3a 1.3a 1.3a 0.9 nC Qg (Typ.)

Specifications:

• Continuous Drain Current Id: 1.3 A
• Drain Source Voltage Vds: 20 V
• Module Configuration: Dual
• Number of Pins: 6
• On Resistance Rds(on): 0.165 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 1.25 W
• Rds(on) Test Voltage Vgs: 4.5 V
• Transistor Case Style: SOT-363
• Transistor Polarity: N Channel

RoHS: Yes

Other Names:

SI1922EDHT1GE3, SI1922EDH T1 GE3