Datasheet PHE13009 - NXP TRANSISTOR, NPN, 12 A, 700 V, TO220AB

Detailed Description

Manufacturer: NXP

Description: TRANSISTOR, NPN, 12 A, 700 V, TO220AB

Download Data Sheet

Docket:
DISCRETE SEMICONDUCTORS
DATA SHEET
PHE13009 Silicon Diffused Power Transistor
Product specification March 1999
NXP Semiconductors

Specifications:

• Collector Emitter Voltage V(br)ceo: 400 V
• DC Collector Current: 12 A
• DC Current Gain: 40
• Number of Pins: 3
• Power Dissipation: 80 W
• SVHC: No SVHC (19-Dec-2011)
• Transistor Case Style: TO-220AB
• Transistor Polarity: NPN

RoHS: Yes