Datasheet PMBFJ110,215 - NXP JET, N CH, 25 V, SOT-23

Detailed Description

Manufacturer: NXP

Description: JET, N CH, 25 V, SOT-23

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Docket:
PMBFJ108; PMBFJ109; PMBFJ110
N-channel junction FETs
Rev.

4 -- 20 September 2011 Product data sheet
1. Product profile
1.1 General description

Specifications:

• Breakdown Voltage Vbr: -25 V
• Current Idss Min: 10 mA
• Gate-Source Cutoff Voltage Vgs(off) Max: -500 mV
• Mounting Type: SMD
• Number of Pins: 3
• Operating Temperature Range: -65°C to +150°C
• Package / Case: SOT-23
• Power Dissipation: 250 mW
• SVHC: No SVHC (19-Dec-2011)
• Transistor Case Style: SOT-23
• Transistor Polarity: N Channel
• Transistor Type: JFET
• Zero Gate Voltage Drain Current Idss: 10 mA

RoHS: Yes

Other Names:

PMBFJ110215, PMBFJ110 215