Datasheet PMBFJ175,215 - NXP JFET, P CH, 30 V, 0.03 A, SOT23

Detailed Description

Manufacturer: NXP

Description: JFET, P CH, 30 V, 0.03 A, SOT23

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Docket:
DISCRETE SEMICONDUCTORS
DATA SHEET
PMBFJ174 to 177 P-channel silicon field-effect transistors
Product specification April 1995
NXP Semiconductors

Specifications:

• Breakdown Voltage Vbr: 30 V
• Continuous Drain Current Id: 70 mA
• Gate-Source Cutoff Voltage Vgs(off) Max: 6 V
• Mounting Type: SMD
• Number of Pins: 3
• On Resistance Rds(on): 125 Ohm
• Operating Temperature Range: -65°C to +150°C
• Package / Case: SOT-23
• Power Dissipation: 300 mW
• SVHC: No SVHC (19-Dec-2011)
• Transistor Case Style: SOT-23
• Transistor Polarity: P Channel
• Transistor Type: JFET
• Voltage Vds Typ: 30 V
• Zero Gate Voltage Drain Current Idss: 7 mA to 70 mA

RoHS: Yes

Other Names:

PMBFJ175215, PMBFJ175 215