Datasheet PMBFJ176,215 - NXP JET, P CH, 30 V, SOT-23

Detailed Description

Manufacturer: NXP

Description: JET, P CH, 30 V, SOT-23

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Docket:
DISCRETE SEMICONDUCTORS
DATA SHEET
PMBFJ174 to 177 P-channel silicon field-effect transistors
Product specification April 1995
NXP Semiconductors

Specifications:

• Breakdown Voltage Vbr: 30 V
• Current Idss Max: 35 mA
• Current Idss Min: 2 mA
• Gate-Source Cutoff Voltage Vgs(off) Max: 4 V
• Mounting Type: SMD
• Number of Pins: 3
• Operating Temperature Range: -65°C to +150°C
• Package / Case: SOT-23
• Power Dissipation: 300 mW
• SVHC: No SVHC (19-Dec-2011)
• Transistor Case Style: SOT-23
• Transistor Polarity: P Channel
• Transistor Type: JFET
• Zero Gate Voltage Drain Current Idss: 2 mA to 35 mA

RoHS: Yes

Other Names:

PMBFJ176215, PMBFJ176 215