Datasheet PMBFJ310 - NXP TRANSISTOR, JFET, N, SOT-23

Detailed Description

Manufacturer: NXP

Description: TRANSISTOR, JFET, N, SOT-23

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Docket:
PMBFJ308; PMBFJ309; PMBFJ310
N-channel silicon field-effect transistors
Rev.

4 -- 20 September 2011 Product data sheet
1. Product profile
1.1 General description

Specifications:

• Breakdown Voltage Vbr: -25 V
• Current Idss Max: 60 mA
• Current Idss Min: 12 mA
• Current Ig: 50 mA
• Drain Source Voltage Vds: 25 V
• Gate-Source Cutoff Voltage Vgs(off) Max: -6.5 V
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• Package / Case: SOT-23
• Power Dissipation Max: 250 mW
• Power Dissipation: 250 mW
• SVHC: No SVHC (19-Dec-2011)
• Transistor Case Style: SOT-23
• Transistor Polarity: N Channel
• Transistor Type: JFET
• Zero Gate Voltage Drain Current Idss: 24 mA to 60 mA

RoHS: Yes