Datasheet BUK965R8-100E - NXP MOSFET, N CH, 100 V, 120 A, D2PAK

Detailed Description

Manufacturer: NXP

Description: MOSFET, N CH, 100 V, 120 A, D2PAK

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Docket:
D2
PA K
BUK965R8-100E
N-channel TrenchMOS logic level FET
Rev.

2 -- 16 May 2012 Product data sheet

Specifications:

• Continuous Drain Current Id: 120 A
• Drain Source Voltage Vds: 100 V
• MSL: MSL 1 - Unlimited
• Number of Pins: 3
• On Resistance Rds(on): 0.00445 Ohm
• Operating Temperature Range: -55°C to +175°C
• Power Dissipation: 357 W
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 1.7 V
• Transistor Case Style: TO-263
• Transistor Polarity: N Channel
• RoHS: Y-Ex
• SVHC: No SVHC (19-Dec-2011)

Other Names:

BUK965R8100E, BUK965R8 100E