Datasheet VS-GB100DA60UP - Vishay IGBT MODULE, 600 V, 100 A, SOT-227

Detailed Description

Manufacturer: Vishay

Description: IGBT MODULE, 600 V, 100 A, SOT-227

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Docket:
GB100DA60UP
Vishay Semiconductors
Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A
FEATURES
· NPT warp 2 speed IGBT technology with positive temperature coefficient · Square RBSOA · HEXFRED® antiparallel diodes with ultrasoft reverse recovery

Specifications:

• Collector Emitter Voltage V(br)ceo: 600 V
• Collector Emitter Voltage Vces: 2.4 V
• DC Collector Current: 125 A
• Number of Pins: 4
• Operating Temperature Range: -40°C to +150°C
• Power Dissipation: 447 W
• Transistor Case Style: SOT-227
• Transistor Polarity: NPN
• RoHS: Yes

Other Names:

VSGB100DA60UP, VS GB100DA60UP