Datasheet VS-GB75DA120UP - Vishay IGBT MODULE, 1200 V, 75 A, SOT-227

Detailed Description

Manufacturer: Vishay

Description: IGBT MODULE, 1200 V, 75 A, SOT-227

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Docket:
GB75DA120UP
Vishay Semiconductors
Insulated Gate Bipolar Transistor (Ultrafast IGBT), 75 A
FEATURES
· NPT Generation V IGBT technology · Square RBSOA · HEXFRED® low Qrr, low switching energy · Positive VCE(on) temperature coefficient · Fully isolated package

Specifications:

• Collector Emitter Voltage V(br)ceo: 1.2 kV
• Collector Emitter Voltage Vces: 3.3 V
• DC Collector Current: 131 A
• Number of Pins: 4
• Operating Temperature Range: -40°C to +150°C
• Power Dissipation: 658 W
• Transistor Case Style: SOT-227
• Transistor Polarity: NPN
• RoHS: Yes

Other Names:

VSGB75DA120UP, VS GB75DA120UP