Datasheet VS-GA300TD60S - Vishay IGBT MODULE, 600 V, 300 A, INT-A-PAK

Detailed Description

Manufacturer: Vishay

Description: IGBT MODULE, 600 V, 300 A, INT-A-PAK

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Docket:
GA300TD60S
Vishay Semiconductors
Dual INT-A-PAK Low Profile "Half-Bridge" (Standard Speed IGBT), 300 A
FEATURES
· Generation 4 IGBT technology · Standard: Optimized for hard switching speed DC to 1 kHz · Low VCE(on) · Square RBSOA · HEXFRED® antiparallel diode with ultrasoft reverse recovery characteristics · Industry standard package · Al2O3 DBC Dual INT-A-PAK Low Profile · UL approved file E78996 · Compliant to RoHS Directive 2002/95/EC · Designed for industrial level

Specifications:

• Collector Emitter Voltage V(br)ceo: 600 V
• Collector Emitter Voltage Vces: 1.24 V
• DC Collector Current: 530 A
• Number of Pins: 3
• Operating Temperature Range: -40°C to +150°C
• Power Dissipation: 1.136 kW
• Transistor Case Style: Double INT-A-PAK
• Transistor Polarity: NPN
• RoHS: Yes

Other Names:

VSGA300TD60S, VS GA300TD60S