Datasheet Fairchild BD679ASTU
Manufacturer | Fairchild |
Series | BD675A, BD677A, BD679A, BD681 |
Part Number | BD679ASTU |
NPN Epitaxial Silicon Transistor
Datasheets
BD675A/677A/679A/681 BD675A/677A/679A/681
Medium Power Linear and Switching Applications Medium Power Darlington TR Complement to BD676A, BD678A, BD680A and BD682 respectively TO-126 2.Collector 3.Base NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO Collector-Base Voltage Parameter : BD675A : BD677A : BD679A : BD681 : BD675A : BD677A : BD679A : BD681 1 1. Emitter Value 45 60 80 100 45 60 80 100 5 4 6 100 40 150 -65 ~ 150 Units V V V V V V V V V A A mA W °C °C VCEO Collector-Emitter Voltage VEBO IC ICP IB PC TJ TSTG Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Electrical Characteristics TC=25°C unless otherwise noted
Symbol VCEO(sus) Parameter *Collector-Emitter Sustaining Voltage : BD675A : BD677A : BD679A : BD681 Collector-Base Voltage : BD675A : BD677A : BD679A : BD681 : BD675A : BD677A : BD679A : BD681 : BD675A/677A/679A : BD681 Test Condition IC = 50mA, IB = 0 Min. 45 60 80 100 200 200 200 200 500 500 500 500 2 750 750 2.8 2.5 2.5 2.5 V V V V Typ. Max. Units V V V V µA µA µA µA µA µA µA µA mA ICBO VCB = 45V, IE = 0 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCB = 100V, VBE = 0 VCE = 45V, VBE = 0 VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VCE = 100V, VBE = 0 VEB = 5V, IC = 0 VCE = 3V, IC = 2A VCE = 3V, IC = 1.5A IC = 2A, IB = 40mA IC = 1.5A, IB = 30mA VCE = 3V, IC = 2A VCE = 3V, IC = 1.5A ICEO Collector Cut-off Current IEBO hFE VCE(sat) Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage : BD675A/677A/679A : BD681 * Base-Emitter ON Voltage : BD675A/677A/679A : BD681 VBE(on) * Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
©2000 Fairchild Semiconductor International Rev. A, February 2000 BD675A/677A/679A/681 Typical Characteristics 10000 VCE(sat)[V], SATURATION VOLTAGE VCE = 3V 2.4 Ic = 250 IB 2.0 hFE, DC CURRENT GAIN 1.6 1000 1.2 0.8 0.4 100 0.1 1 10 0.0 0.1 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage 4.0 3.8 VCE = 3V 3.6 3.4 3.2 3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 10 IC(max). Pulsed IC(max). Continuous 10µ s IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT DC
100µs
1 BD675A BD677A BD679A BD681
0.1 1 10 1ms 10ms
100 1000 VBE[V], BASE-EMITTER VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 3. Base-Emitter On Voltage Figure 4. Safe Operating Area 50 PC[W], POWER DISSIPATION 40 30 20 …
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- Discretes > Bipolar Transistors > High Power BJTs