Product
Folder Order
Now Support &
Community Tools &
Software Technical
Documents CSD19531KCS
SLPS407C – SEPTEMBER 2013 – REVISED MARCH 2017 CSD19531KCS 100-V N-Channel NexFET™ Power MOSFET
1 Features 1 Product Summary Ultra-Low Qg and Qgd
Low-Thermal Resistance
Avalanche Rated
Lead-Free Terminal Plating
RoHS Compliant
Halogen Free
TO-220 Plastic Package TA = 25°C TYPICAL VALUE Drain-to-Source Voltage 100 V Qg Gate Charge Total (10 V) 37 nC Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage 7.5 nC VGS = 6 V 7.3 VGS = 10 V 6.4 2.7 mΩ
V Device Information(1) 2 Applications UNIT VDS Secondary Side Synchronous Rectifier
Hot Swap Telecom
Motor Control DEVICE PACKAGE MEDIA QTY SHIP CSD19531KCS TO-220 Plastic Package Tube 50 Tube (1) For all available packages, see the orderable addendum at
the end of the data sheet. Absolute Maximum Ratings 3 Description
This 100-V, 6.4-mО©, TO-220 NexFETв„ў power
MOSFET is designed to minimize losses in power
conversion applications. TA = 25В°C VALUE UNIT VDS Drain-to-Source Voltage 100 V VGS Gate-to-Source Voltage В±20 V Continuous Drain Current (Package Limited) 100 Continuous Drain Current (Silicon Limited),
TC = 25В°C 110 Continuous Drain Current (Silicon Limited),
TC = 100В°C 78 IDM Pulsed Drain Current(1) 285 A PD Power Dissipation 214 W TJ, …
