Datasheet Texas Instruments LPV802DGKT

Dual Channel 320nA Nanopower Operational Amplifier 8-VSSOP -40 to 125

Datasheets

PDF, 1.3 Mb, Revision: B, File published: Nov 16, 2016

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Lifecycle Status	Active (Recommended for new designs)
Manufacture's Sample Availability	No

Additional Features	EMI Hardened
Architecture	CMOS
CMRR(Min)	80 dB
CMRR(Typ)	98 dB
GBW(Typ)	0.008 MHz
Iq per channel(Max)	0.000415 mA
Iq per channel(Typ)	0.00032 mA
Number of Channels	2
Offset Drift(Typ)	1.5 uV/C
Operating Temperature Range	-40 to 125 C
Output Current(Typ)	4.7 mA
Package Group	VSSOP
Package Size: mm2:W x L	8VSSOP: 15 mm2: 4.9 x 3(VSSOP) PKG
Rail-to-Rail	In to V-,Out
Rating	Catalog
Slew Rate(Typ)	0.0018 V/us
Total Supply Voltage(Max)	5.5 +5V=5, +/-5V=10
Total Supply Voltage(Min)	1.6 +5V=5, +/-5V=10
Vn at 1kHz(Typ)	420 nV/rtHz
Vos (Offset Voltage @ 25C)(Max)	3.5 mV

RoHS

Compliant

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Passing the IEC61000-4-3 Radiated EMI test is a requirement for preparing a product for many industrial,medical and consumer markets. This application note presents the results of a simple comparison of theLPV802 nanopower operational amplifier and two other competing devices in a Carbon Monoxide gassensor circuit while subjected to IEC61000-4-3 EMC test conditions.
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Series: LPV802 (2)

Semiconductors > Amplifiers > Operational Amplifiers (Op Amps) > Ultra-Low-Power Op Amps (<=10uA)