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Documents CSD16556Q5B
SLPS432C – NOVEMBER 2012 – REVISED JANUARY 2015 CSD16556Q5B 25-V N-Channel NexFET™ Power MOSFET
1 Features 1 Product Summary Extremely Low Resistance
Ultralow Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5-mm Г— 6-mm Plastic Package TA = 25В°C 25 V Qg Gate Charge Total (4.5 V) 36 nC Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage Top View D S 3 6 D D
5 4 V Qty Package Ship 2500 CSD16556Q5BT 7-Inch Reel 250 SON 5 x 6 mm
Plastic Package Tape and
Reel Absolute Maximum Ratings
TA = 25В°C VALUE UNIT VDS Drain-to-Source Voltage 25 V VGS Gate-to-Source Voltage В±20 V Continuous Drain Current (Package limited) 100 Continuous Drain Current (Silicon limited),
TC = 25В°C 263 A Continuous Drain Current(1) 40 A Pulsed Drain Current(2) 400 A Power Dissipation(1) 3.2 Power Dissipation, TC = 25В°C 191 TJ,
Tstg Operating Junction and
Storage Temperature Range –55 to 150 °C EAS Avalanche Energy, single pulse
ID = 103 A, L = 0.1 mH, RG = 25 Ω 530 mJ PD G mΩ Media IDM …