Very High Current, High Power Operational Amplifier 8-TO-3
PDF, 23 Kb, File published: Sep 27, 2000
A critical issue with all semiconductor devices is junction temperature (TJ). TJ must be kept below its maximum rated value, typically 150В°C. The lower the junction temperature the better. The thermal circuit shown allows temperature to be estimated with simple calculations. The temperature rise across each interface is equal to the total power dissipated in the device ti
PDF, 73 Kb, File published: Sep 27, 2000
Proper mounting of TO-3 packages is required to assure rated performance and reliability. Although the procedures are simple, ignoring them can result in poor performance and catastrophic failure of the device.
PDF, 51 Kb, File published: Oct 4, 2000
At Burr-Brown, we characterize and qualify the reliability of our devices through high temperature life testing. The results of this testing are quantified with such values as MTTF and failure rate. This information can be very valuable when used for comparative purposes or applied to reliablility calculations. However, this information loses its worth if it is not precisely understood and appropr
PDF, 55 Kb, File published: Sep 27, 2000
To achieve reliable power amplifier designs you must consider the stress on the amplifier compared to its power handling limitations. Power handling limits are specified by the Safe Operating Area (SOA) curves of the power amp. Stress on the amplifier depends on amplifier load and signal conditions which can be evaluated with straightforward techniques.
