Datasheet Texas Instruments ISO5852S-EP
Manufacturer | Texas Instruments |
Series | ISO5852S-EP |
High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver
Datasheets
ISO5852S-EP High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features datasheet
PDF, 1.7 Mb, File published: Dec 23, 2016
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Status
ISO5852SMDWREP | V62/16623-01XE | |
---|---|---|
Lifecycle Status | Active (Recommended for new designs) | Active (Recommended for new designs) |
Manufacture's Sample Availability | Yes | Yes |
Packaging
ISO5852SMDWREP | V62/16623-01XE | |
---|---|---|
N | 1 | 2 |
Pin | 16 | 16 |
Package Type | DW | DW |
Industry STD Term | SOIC | SOIC |
JEDEC Code | R-PDSO-G | R-PDSO-G |
Package QTY | 2000 | 2000 |
Carrier | LARGE T&R | LARGE T&R |
Device Marking | ISO5852SM | ISO5852SM |
Width (mm) | 7.5 | 7.5 |
Length (mm) | 10.3 | 10.3 |
Thickness (mm) | 2.35 | 2.35 |
Pitch (mm) | 1.27 | 1.27 |
Max Height (mm) | 2.65 | 2.65 |
Mechanical Data | Download | Download |
Parametrics
Parameters / Models | ISO5852SMDWREP | V62/16623-01XE |
---|---|---|
DIN V VDE V 0884-10 Working Voltage, Vpk | 2121 | 2121 |
DIN V VDE V 0884-10 Transient Overvoltage Rating, Vpk | 8000 | 8000 |
Input VCC(Max), V | 5.5 | 5.5 |
Input VCC(Min), V | 2.25 | 2.25 |
Isolation Rating, Vrms | 5700 | 5700 |
Number of Channels | 1 | 1 |
Operating Temperature Range, C | -55 to 125 | -55 to 125 |
Output VCC/VDD(Max), V | 30 | 30 |
Output VCC/VDD(Min), V | 15 | 15 |
Package Size: mm2:W x L, PKG | 16SOIC: 106 mm2: 10.3 x 10.3(SOIC) | 16SOIC: 106 mm2: 10.3 x 10.3(SOIC) |
Peak Output Current, A | 5 | 5 |
Power Switch | IGBT,SiCFET | IGBT,SiCFET |
Prop Delay(Max), ns | 110 | 110 |
Prop Delay(Min), ns | 76 | 76 |
Eco Plan
ISO5852SMDWREP | V62/16623-01XE | |
---|---|---|
RoHS | Compliant | Compliant |
Model Line
Series: ISO5852S-EP (2)
Manufacturer's Classification
- Semiconductors> Space & High Reliability> Power Management Products> Power Management Special Function Products