MMBV3401LT1G
Silicon Pin Diode
This device is designed primarily for VHF band switching
applications but is also suitable for use in general-purpose switching
circuits. Supplied in a Surface Mount package.
Features http://onsemi.com Rugged PIN Structure Coupled with Wirebond Construction
for Optimum Reliability Low Capacitance -0.7 pF (Typ) at VR = 20 Vdc Very Low Series Resistance at 100 MHz 3
Cathode 1
Anode 0.34 W (Typ) @ IF = 10 mAdc These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant 3 SOT-23 (TO-236AB)
CASE 318-08
STYLE 8 1
2 MAXIMUM RATINGS
Rating Symbol Value Unit Reverse Voltage VR 35 Vdc Forward Power Dissipation
@ TA = 25В°C
Derate above 25В°C PD Junction Temperature TJ +125 В°C Tstg -55 to +150 В°C Storage Temperature Range 200
2.0 MARKING DIAGRAM mW
mW/В°C Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability. 4D M G
G
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