Datasheet International Rectifier IRF9Z24N

ManufacturerInternational Rectifier
SeriesIRF9Z24N
Datasheet International Rectifier IRF9Z24N

MOSFET, 55 V, 12 A, TO-220

Datasheets

Datasheet IRF9Z24N
PDF, 117 Kb, Language: en, File uploaded: May 27, 2020, Pages: 9
HEXFET Power MOSFET
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Detailed Description

Specifications:

  • Continuous Drain Current Id: 12 A
  • Current Id Max: -12 A
  • Current Temperature: 25°C
  • Drain Source Voltage Vds: 55 V
  • Full Power Rating Temperature: 25°C
  • Junction to Case Thermal Resistance A: 3.3°C/W
  • Lead Spacing: 2.54 mm
  • Mounting Type: Through Hole
  • Number of Pins: 3
  • Number of Transistors: 1
  • On Resistance Rds(on): 172 MOhm
  • Package / Case: TO-220AB
  • Pin Configuration: A
  • Pin Format: 1 g
  • Power Dissipation Pd: 45 W
  • Pulse Current Idm: 48 A
  • Rds(on) Test Voltage Vgs: -10 V
  • SVHC: No SVHC (15-Dec-2010)
  • Threshold Voltage Vgs Typ: -4 V
  • Transistor Case Style: TO-220AB
  • Transistor Polarity: P Channel
  • Voltage Vds Typ: -55 V
  • Voltage Vds: 55 V
  • Voltage Vgs Max: -4 V
  • Voltage Vgs Rds on Measurement: -10 V

RoHS: Yes

Model Line

Series: IRF9Z24N (1)

Manufacturer's Classification

  • Single MOSFETs