Datasheet International Rectifier IRF9Z24N
Manufacturer | International Rectifier |
Series | IRF9Z24N |
MOSFET, 55 V, 12 A, TO-220
Datasheets
Datasheet IRF9Z24N
PDF, 117 Kb, Language: en, File uploaded: May 27, 2020, Pages: 9
HEXFET Power MOSFET
HEXFET Power MOSFET
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Detailed Description
Specifications:
- Continuous Drain Current Id: 12 A
- Current Id Max: -12 A
- Current Temperature: 25°C
- Drain Source Voltage Vds: 55 V
- Full Power Rating Temperature: 25°C
- Junction to Case Thermal Resistance A: 3.3°C/W
- Lead Spacing: 2.54 mm
- Mounting Type: Through Hole
- Number of Pins: 3
- Number of Transistors: 1
- On Resistance Rds(on): 172 MOhm
- Package / Case: TO-220AB
- Pin Configuration: A
- Pin Format: 1 g
- Power Dissipation Pd: 45 W
- Pulse Current Idm: 48 A
- Rds(on) Test Voltage Vgs: -10 V
- SVHC: No SVHC (15-Dec-2010)
- Threshold Voltage Vgs Typ: -4 V
- Transistor Case Style: TO-220AB
- Transistor Polarity: P Channel
- Voltage Vds Typ: -55 V
- Voltage Vds: 55 V
- Voltage Vgs Max: -4 V
- Voltage Vgs Rds on Measurement: -10 V
RoHS: Yes
Model Line
Series: IRF9Z24N (1)
Manufacturer's Classification
- Single MOSFETs