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HEXFET Power MOSFET
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PD -94594A IRF7832
HEXFET® Power MOSFET
Applications
l Synchronous MOSFET for Notebook
Processor Power
l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems VDSS 4.0m:@VGS = 10V 30V 1 8 S 2 7 S 3 6 4 5 S Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l 20V VGS Max. Gate Rating RDS(on) max G Qg
34nC A
A
D
D
D
D SO-8 Top View Absolute Maximum Ratings
Max. Units VDS Drain-to-Source Voltage Parameter 30 V VGS Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V ± 20 ID @ TA = 25°C 20 IDM Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 160 ID @ TA = 70°C 16 c PD @TA = 25°C Power Dissipation 2.5 PD @TA = 70°C Power Dissipation 1.6 TJ Linear Derating Factor
Operating Junction and TSTG Storage Temperature Range A …
