В AUIRFR8403
AUIRFU8403 AUTOMOTIVE GRADE Features
п‚ Advanced Process Technology
п‚ New Ultra Low On-Resistance
п‚ 175В°C Operating Temperature
п‚ Fast Switching
п‚ Repetitive Avalanche Allowed up to Tjmax
п‚ Lead-Free, RoHS Compliant
п‚ Automotive Qualified * VDSS
RDS(on) В 40V
2.4mпЃ—пЂ
3.1mпЃ—пЂ
127Aп‚Ѓ
100A typ.
max. ID (Silicon Limited)
ID (Package Limited)
D D Description
Specifically designed for Automotive applications, this HEXFETВ® Power MOSFET
utilizes the latest processing techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175В°C junction operating
temperature, fast switching speed and improved repetitive avalanche rating. These
features combine to make this design an extremely efficient and reliable device for
use in Automotive applications and wide variety of other applications. Applications …
