IPD70N03S4L-04 OptiMOSВ®-T2 Power-Transistor Product Summary
V DS 30 V R DS(on),max 4.3 mΩ ID 70 A Features N-channel -Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD70N03S4L-04 PG-TO252-3-11 4N03L04 Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Symbol Continuous drain current1) ID Conditions
T C=25 В°C, V GS=10 V
T C=100 В°C,
V GS=10 V2) Value
70 Unit
A 70 Pulsed drain current2) I D,pulse T C=25 В°C 280 Avalanche energy, single pulse E AS I D=70 A 57 mJ Avalanche current, single pulse I AS T C=25 В°C 70 A Gate source voltage V GS В±16 V Power dissipation P tot 68 W Operating and storage temperature T j, T stg -55 . +175 В°C T C=25 В°C IEC climatic category; DIN IEC 68-1 Rev. 2.1 55/175/56 page 1 2008-06-17 IPD70N03S4L-04 Parameter Symbol Values Conditions Unit min. typ. max. -2.2 minimal footprint -62 6 cm2 cooling area3) -40 Thermal characteristics2)
Thermal resistance, junction -case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 В°C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 30 -Gate threshold voltage V GS(th) V DS=V GS, I D=30 ВµA 1.0 1.5 2.2 Zero gate voltage drain current I DSS V DS=30 V, V GS=0 V,
T j=25 В°C -0.01 1 -10 1000 -5 60 V DS=30 V, V GS=0 V,
T j=125 В°C2)
V DS=18 V, V GS=0 V,
T j=85 °C2) V µA Gate-source leakage current I GSS V GS=16 V, V DS=0 V -1 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=35 A -4.9 6.5 mΩ V GS=10 V, I D=70 A -3.6 4.3 Rev. 2.1 page 2 2008-06-17 IPD70N03S4L-04 Parameter Symbol Values Conditions Unit min. typ. max. -2500 3300 -640 830 Dynamic characteristics2)
Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss -35 70 Turn-on delay time t d(on) -7 -Rise time tr -5 -Turn-off delay time t d(off) -27 -Fall time tf -5 -Gate to source charge Q gs -8 10 Gate to drain charge Q gd -5 10 Gate charge total Qg -37 48 Gate plateau voltage V plateau -3.2 -V -80 A -280 0.6 0.95 1.3 V -40 -ns -35 -nC V GS=0 V, V DS=25 V,
f =1 MHz V DD=15 V, V GS=10 V,
I D=70 A, R G=3.5 Ω pF ns Gate Charge Characteristics2) V DD=24 V, I D=70 A,
V GS=0 to 10 V nC Reverse Diode
Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD V GS=0 V, I F=70 A,
T j=25 В°C Reverse recovery time2) t rr V R=15 V, I F=I S,
di F/dt =100 A/Вµs Reverse recovery charge2) Q rr T C=25 …
