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HEXFET Power MOSFET
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PD 9.1698A IRL3502 PRELIMINARY HEXFET® Power MOSFET
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l Advanced Process Technology
Optimized for 4.5V-7.0V Gate Drive
Ideal for CPU Core DC-DC Converters
Fast Switching D VDSS = 20V
RDS(on) = 0.007Ω G Description ID = 110A
S These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters. Advanced processing techniques
combined with an optimized gate oxide design results
in a die sized specifically to offer maximum efficiency
at minimum cost.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry. TO-220AB Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM …
