EPC2050 – Enhancement-Mode Power Transistor
Preliminary Specification Sheet
Status: Engineering
Features: VDS, 350 V Maximum RDS(on), 65 mΩ ID, 6.3 A
Applications: Multi-Level AC-DC Conversion EV Charging Solar Power Inverters Motor Drives Wireless Power Class-E Amplifiers LED Lighting Medical Imaging EPC2050 eGaNВ® FETs are supplied in
passivated die form with solder bumps.
Die Size: 1.95 mm x 1.95 mm Maximum Ratings
VDS Drain-to-Source Voltage (Continuous) 350 V ID Continuous (TA = 25ЛљC, RОёJA= 26 ЛљC/W)
Pulsed (25ЛљC, TPULSE = 300 Вµs) 6.3
26 A VGS Gate-to-Source Voltage
Gate-to-Source Voltage 6
-4 V TJ
TSTG Operating Temperature
Storage Temperature -40 to 150
-40 to 150 ЛљC Static Characteristics (TJ= 25ЛљC unless otherwise stated)
PARAMETER
BVDSS TEST CONDITIONS Drain-to-Source Voltage VGS = 0 V, ID = 120 ВµA Drain Source Leakage VDS = 280 V, VGS = 0 V MIN TYP MAX UNIT 350 V
2 20 ВµA Gate-to-Source Forward Leakage VGS = 5 V 0.1 1 Gate-to-Source Reverse Leakage VGS = -4 V 2 20 mA
ВµA VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 1.5 mA RDS(on)
VSD Drain-Source On Resistance
Source-Drain Forward Voltage VGS = 5 V, ID = 6 A
IS = 0.5 A, VGS = 0 V IDSS
IGSS 0.8 1.4 2.5 V 42 …
