SPB08P06P G SIPMOS Power-Transistor
® Product Summary Features P-Channel Enhancement mode V DS -60 V R DS(on),max 0.3 Ω ID -8.8 A Avalanche rated dv /dt rated 175°C operating temperature PG-TO263-3 Pb-free lead finishing; RoHS compliant
В° Halogen-free according to IEC61249-2-21 В° Qualified according to AEC Q101 Type Package SPB08P06PG PG-TO263-3 Tape and reel information
1000 pcs / reel Marking Lead free Packing 08P06P Yes Non dry Maximum ratings, at T j=25 В°C, unless otherwise specified
Parameter Symbol Conditions Value Unit steady state
Continuous drain current ID T A=25 В°C -8.8 T A=100 В°C -6.3
-35.32 A Pulsed drain current I D,pulse T A=25 °C Avalanche energy, single pulse E AS I D=8.83 A, R GS=25 Ω 70 mJ Reverse diode dv /dt dv /dt I D=8.83 A, V DS=48 V,
di /dt =-200 A/Вµs,
T j,max=175 В°C -6 kV/Вµs Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg T A=25 В°C В±20 V 42 W "-55 . +175" В°C ESD class
260 В°C Soldering temperature 55/150/56 IEC climatic category; DIN IEC 68-1 Rev 1.7 page 1 2012-09-07 SPB08P06P G
Parameter Values Symbol Conditions Unit min. typ. max. Thermal characteristics
Thermal resistance,
junction -case R thJC -3.6 Thermal resistance,
junction -ambient, leaded R thJA -62 SMD version, device on PCB: R thJA minimal footprint -62 6 cm2 cooling area1) -40 K/W K/W Electrical characteristics, at T j=25 В°C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-250 ВµA -60 -Gate threshold voltage V GS(th) V DS=V GS, I D=-250 ВµA -2.1 3 -4 Zero gate voltage drain current I DSS V DS=-60 V, V GS=0 V,
T j=25 В°C -0.1 -1 V DS=-60 V, V GS=0 V,
T j=150 °C -10 -100 V µA Gate-source leakage current I GSS V GS=-20 V, V DS=0 V -10 -100 nA Drain-source on-state resistance R DS(on) V GS=-10 V, I D=-6.2 A -221 300 mΩ Transconductance g fs |V DS|>2|I D|R DS(on)max,
I D=-6.2 A 2.4 4.8 -S 1) Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70Вµm thick) copper area for drain connection.
PCB is vertical without blown air. Rev 1.7 page 2 2012-09-07 SPB08P06P G
Parameter Values Symbol Conditions Unit min. typ. max. -335 420 -105 135 Dynamic characteristics
Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss -65 95 Turn-on delay time t d(on) -16 24 Rise time tr -46 69 Turn-off delay time t d(off) -48 72 Fall time tf -14 21 Gate to source charge Q gs -1.9 -2.6 Gate to drain charge Q gd -5 -8 Gate charge total Qg -10 -13 Gate plateau voltage V plateau -6 -V -8.8 A -35.3 -1 -1.55 V -60 90 ns -100 150 nC V GS= …
