PDF, 285 Kb, Language: en, Revision: B, File published: Mar 21, 2011
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IRF9540, SiHF9540
Vishay Siliconix Power MOSFET
FEATURES PRODUCT SUMMARY
VDS (V) • Dynamic dV/dt Rating -100 RDS(on) () VGS = -10 V Qg (Max.) (nC) 14 Qgd (nC) 29 Configuration RoHS* • P-Channel 61 Qgs (nC) Available • Repetitive Avalanche Rated 0.20 COMPLIANT • 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling Single • Simple Drive Requirements
S • Compliant to RoHS Directive 2002/95/EC TO-220AB DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry. G G D S
D
P-Channel MOSFET ORDERING INFORMATION
Package TO-220AB
IRF9540PbF
SiHF9540-E3
IRF9540
SiHF9540 Lead (Pb)-free …
