GEN2 SiC Schottky Diode
LSIC2SD065C08A, 650 V, 8 A, TO-252-2L (DPAK) LSIC2SD065C08A 650 V, 8 A SiC Schottky Barrier Diode RoHS Pb Description SiC This series of silicon carbide (SiC) Schottky diodes has
reverse recovery current, high surge capability,
Schottkynegligible
Diode
and a maximum operating junction temperature of 175 °C.
These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.
Features
• AEC-Q101 qualified • Excellent surge capability • P
ositive temperature
coefficient for safe
operation and ease of
paralleling • E
xtremely fast,
temperature-independent
switching behavior • 1
75 °C maximum
operating junction
temperature
Circuit Diagram TO-252-2L (DPAK) Applications
• B
oost diodes in PFC or
DC/DC stages Case Case • D …
