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PNP Silicon General Purpose Transistors
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by 2N3905/D SEMICONDUCTOR TECHNICAL DATA
PNP Silicon *Motorola Preferred Device COLLECTOR
3
2
BASE
1
EMITTER
1
2 MAXIMUM RATINGS
Rating Symbol Value Unit Collector - Emitter Voltage VCEO 40 Vdc Collector - Base Voltage VCBO 40 Vdc Emitter - Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 200 mAdc Total Device Dissipation @ TA = 25°C
Derate above 25°C PD 625
5.0 mW
mW/°C Total Power Dissipation @ TA = 60°C PD 250 mW Total Device Dissipation @ TC = 25°C
Derate above 25°C PD 1.5
12 Watts
mW/°C TJ, Tstg - 55 to +150 °C Operating and Storage Junction
Temperature Range 3 CASE 29-04, STYLE 1
TO-92 (TO-226AA) THERMAL CHARACTERISTICS(1)
Symbol Max Unit Thermal Resistance, Junction to
Ambient Characteristic RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit Collector - Emitter Breakdown Voltage (2)
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