Datasheet ON Semiconductor MMBD1501A

MMBD1501A / MMBD1503A / MMBD1504A /
MMBD1505A
Small Signal Diodes
Connection Diagrams
1501A 3 1
1504A 3 2 3 3 1503A 2NC 1 2 1 2
3 1505A 1 SOT-23 1 2 Ordering Information
Part Number Top Mark Package Packing Method MMBD1501A A11 SOT-23 3L Tape and Reel, 7 inch Reel, 3k pieces MMBD1503A A13 SOT-23 3L Tape and Reel, 7 inch Reel, 3k pieces MMBD1503A_D87Z A13 SOT-23 3L Tape and Reel, 13 inch Reel, 10k pieces MMBD1504A A14 SOT-23 3L Tape and Reel, 7 inch Reel, 3k pieces MMBD1505A A15 SOT-23 3L Tape and Reel, 7 inch Reel, 3k pieces Absolute Maximum Ratings(1), (2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Value Unit VRRM Maximum Repetitive Reverse Voltage 200 V IF(AV) Average Rectified Forward Current 200 mA IFSM Non-Repetitive Peak Forward
Surge Current TSTG Storage Temperature Range TJ Parameter Pulse Width = 1.0 second 1.0 Pulse Width = 1.0 microsecond 2.0 Operating Junction Temperature A -55 to +150 C 150 C Notes:
1. These ratings are based on a maximum junction temperature of 150C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations. © 1993 Fairchild Semiconductor Corporation
MMBD1501A / MMBD1503A / MMBD1504A / MMBD1505A Rev. 2.6 www.fairchildsemi.com MMBD1501A / MMBD1503A / MMBD1504A / MMBD1505A — Small Signal Diodes April 2016 Values are at TA = 25°C unless otherwise noted. Symbol
PD
RJA Parameter Value Unit Power Dissipation 350 mW Thermal Resistance, Junction-to-Ambient 357 C/W Electrical Characteristics
Values are at TA = 25°C unless otherwise noted. Symbol
VR VF Parameter
Breakdown Voltage Forward Voltage IR Reverse Current CT Total Capacitance Conditions Min. Max. Unit IR = 5.0 A 200 IF = 1.0 mA 620 720 mV IF = 10 mA 720 830 mV V IF = 50 mA 800 890 mV IF = 100 mA 830 930 mV IF = 200 mA 0.87 1.10 V IF = 300 mA 0.90 1.15 V VR = 125 V 1.0 nA VR = 125 V, TA = 150°C 3.0 A VR = 180 V 10.0 nA VR = 180 V, TA = 150°C 5.0 A VR = 0, f = 1.0 MHz 4.0 pF © 1993 Fairchild Semiconductor Corporation
MMBD1501A / MMBD1503A / MMBD1504A / MMBD1505A Rev. 2.6 www.fairchildsemi.com
2 MMBD1501A / MMBD1503A / MMBD1504A / MMBD1505A — Small Signal Diodes Thermal Characteristics 325 3
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