PDF, 284 Kb, Language: en, File uploaded: Jul 2, 2019, Pages: 11
HEXFET Power MOSFET
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PD -91342B Advanced Process Technology
Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
® IRF540NS
IRF540NL l HEXFET® Power MOSFET l Advanced HEXFET Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications. D VDSS = 100V
RDS(on) = 44mΩ G ID = 33A S The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRF540NL) is available for lowprofile applications. D2 Pak
…
